Abstract
The electrorefraction within and below the band edge of multiple (50) InAs/GaAs short period strained-layer superlattice quantum wells has been measured. An index change of 4×10−3 was measured near the excitonic resonance with an applied electric field of 27 kV/cm, corresponding to a quadratic electro-optic coefficient of −3×10−13 cm2/V2. These results agree with predictions from the Kramers-Kronig relations based on measurements of electroabsorption.
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