Abstract
We demonstrate spectroscopic measurements on an InGaAs p-n junction using direct tunnel injection of electrons. In contrast to the metal-base transistor design of conventional ballistic electron emission spectroscopy (BEES), the base layer of our device is comprised of a thin, heavily doped p-type region. By tunneling directly into the semiconductor, we observe a significant increase in collector current compared to conventional BEES measurements. This could enable the study of systems and processes that have thus far been difficult to probe with the low-electron collection efficiency of conventional BEES, such as luminescence from single-buried quantum dots.
Highlights
We demonstrate spectroscopic measurements on an InGaAs p-n junction using direct tunnel injection of electrons
Minority carrier recombination within the p-type region is negligible for such a thin layer, as has been shown in bipolar transistors[16]
Surface recombination at the oxide-semiconductor interface should be insignificant because the emitter electric field will accelerate electrons away from the semiconductor surface
Summary
We demonstrate spectroscopic measurements on an InGaAs p-n junction using direct tunnel injection of electrons. We report spectroscopic results from a structure, shown, in which the base electrode is instead formed by a thin, heavily-doped surface region of the opposite polarity from the semiconductor collector [11].
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