Abstract
The energy and composition of the direct to indirect bandgap crossover in GaxIn1-xP significantly influences its potential for optoelectronic devices, such as solar cells and light emitting diodes, however considerable discrepancies still remain in the literature with regard to the precise value of the crossover composition xc. We revisit this issue in GaxIn1-xP films epitaxially grown on GaAs substrates. Observation of concurrent yet distinct direct and indirect transitions in Ga0.719In0.281P at 2 K using time integrated and time resolved photoluminescence studies places the crossover very near the composition xC = 0.71.
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