Direct imaging of SiO2 thickness variation on Si using modified atomic force microscope

Abstract

Thickness of silicon dioxide was measured by combined atomic force microscopy and nanoscopic C–V spectroscopy. The spatial variation of the oxide thickness and dopant profile on the masked Si were directly imaged. The nanoscopic C–V reveals the same trends as the macroscopic C–V. Shadowing effect of phosphorous ions during implantation was observed from dopant profile in masked Si substrates.