Abstract
A near-field scanning microwave microprobe (NSMM) technique has been used to investigate the photovoltaic effect in solar cells. As the photoconductivity of the n-type silicon layer in the solar cells was varied due to the incident light intensities and the wavelength, we could directly observe the photoconductivity changes inside the solar cells by measuring the change of reflection coefficient S11 of the NSMM at an operating frequency near 4.1 GHz. We also directly imaged the photoconductivity changes by NSMM. Photoconductivity in solar cells is determined from the visualized microwave reflection coefficient changes at the interfaces with high sensitivity.
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