Abstract
We demonstrate a method for charge recombination imaging in the scanning electron microscope and employ this technique to directly image the two-dimensional projection of the generation volume as a function of electron energy and probe current. Using GaAs and SiC bulk samples, we observe the lateral extent of the generation volume increasing as a function of increasing e-beam accelerating voltage, in excellent agreement with previous work. This work also reveals significant variations in minority carrier distribution within the volume for low-Z compared to the high-Z material. The roles of sample geometry and carrier diffusion are discussed. The direct imaging technique used in this work is well suited for further studies of the nature of the effective interaction region for cathodoluminescence or electron-beam induced current studies in any luminescent material.
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