Abstract
We report characterization of Si p-n junction arrays using simultaneous conductance imaging and constant current mode (topographical) scanning tunneling microscopy imaging over a range of reverse bias conditions. Both constant current and conductance imaging of the electrically different regions (n, p, and inverted region) show a pronounced dependence on applied p-n junction bias. Tunneling spectra measured across the p-n junction show that the conductance contrast agrees well with the expected variation due to tip-induced band bending. Taken in combination with the topographical image, conductance images can be used to characterize spatial variations of carrier densities across the device.
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