Abstract
AbstractZnSe and CdSe layers have been grown on InAs substrates using molecular beam epitaxy (MBE) without the need for a III‐V and II‐VI dual chamber system. This paper reports on the optimisation of a chemical oxide removal process using sulphur passivation. This removes the need for conventional in vacuo oxide removal under As overpressure that is used to prevent the formation of high densities of In droplets. X‐ray and photoluminescence characterisation of the samples confirms single crystal growth. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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