Abstract
ABSTRACTFabricating horizontally aligned single wall carbon nanotubes (CNTs) with controlled properties has been one of the significant challenges for field-effect transistor (FET) applications. This report demonstrates a novel procedure for the fabrication of horizontally aligned single walled CNTs using the focused ion beam (FIB) and chemical vapor deposition (CVD). This method allows the morphologies, internal structures, and elemental compositions of CNTs to be directly analyzed in the scanning electron microscope (SEM) and transmission electron microscope (TEM) and avoids any sample preparation procedures that might alter the structure of the CNTs. The techniques of electron beam and ion beam induced deposition (EBID and IBID) of Pt electrodes to the CNT ends were compared and both were found to produce metal contamination around the target area. The fabrication of large area electrodes to assist in testing the CNT's electronic properties, including contact resistance and I-V characteristics was investigated. Using this fabrication technique we were able to perform an I-V sweep on a CNT circuit as well as detect the metal contamination on the CNTs which occurred as a result of electrode deposition.
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