Direct growth of oxide nanowires on CuOx thin film

Abstract

Oxide nanowires were directly grown on a CuOx thin film deposited by plasma-enhanced atomic layer deposition without additional metal catalysts. Oxide nanowires would exhibit metal–catalyst-free growth on the CuOx thin film with oxide materials diffused on the top. Through a focused ion beam and transmission electron microscopy, we could verify that SnO2 and ZnO nanowires were grown as single-crystalline structures just above the CuOx thin film. Bottom-gate structural SnO2 and ZnO nanowire transistors exhibited mobilities of 135.2 and 237.6 cm2 V−1 s−1, respectively. We anticipate that a variety of large-area and high-density oxide nanowires can be grown at low cost by using the CuOx thin film.