Direct growth of large area uniform bi-layer graphene films on silicon substrates by chemical vapor deposition

Abstract

Direct growth of large area uniform high quality graphene films on dielectric or semiconductor substrate is very important for graphene application in electronic devices. In this paper, a simple method is introduced to directly grow uniform and large area bi-layer graphene films on silicon substrates by chemical vapor deposition. Raman spectroscopy, x-ray photoelectron spectroscopy, atomic force microscopy and electrical transport measurements are employed to characterize and evaluate the quality of the as-synthesized graphene films. Raman mapping indicates that the graphene film on silicon substrate is large area uniformity. The graphene-based electronic device is fabricated and the measured mobility of the directly grown graphene film is 343.3 cm2/(V.S). These as-synthesized graphene films may have potential applications in conducted films, electronic devices, etc.