Direct Growth of High‐Quality InP Layers on GaAs Substrates by MOCVD

Abstract

In this report, we have overcome the drawback of surface roughness of metamorphic buffer layer by LP‐MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented GaAs (1 0 0) substrates with 10 degree towards (1 1 1)A. The grown films are characterized by optical microscopy, atomic force microscopy, secondary ion mass spectrometry, transmission electron microscopy and double‐crystal X‐ray diffraction. We also analyze the surface morphology, which is dependent on growth temperature, group III and group V partial pressure, growth rate and V/III ratios. A mirror‐like, uniform surface and high crystal quality of the metamorphic buffer layer directly grown on a GaAs substrate can be achieved. Finally, to investigate the performance of the metamorphic microwave devices, we also fabricate the InAlAs/InGaAs metamorphic HEMT on GaAs substrates.