Direct growth of few-layered graphene on boron doped diamond surface with varying boron doping concentration

Abstract

The diamond-graphene heterostructure is a promising all‑carbon composite structure, which can take advantages of excellent properties of these two materials. At present, the diamond-graphene heterojunction were mostly synthesized by chemical vapor deposition (CVD) method with intrinsic diamond substrate. In this study, the few-layered graphene is synthesized on boron-doped-diamond (BDD) surface through a simple thermal treatment method with Ni catalyst. The effects of boron doping concentration of substrate on the synthesis of diamond-graphene heterojunctions is studied. It demonstrates that the surface morphology and roughness are improved with the increasing of substrate doping concentration. Compared with the light doped and un-doped diamond, the number of graphene layers and quality decreases and increases, respectively.