Abstract
Galvanic reactions between metal ions and semiconductor wafers provide a simple and fast approach to grow high-quality metal nanoplates with controlled sizes and thicknesses and clean surfaces. For example, the image shows an SEM image of silver nanoplates with thicknesses of ∼28 nm and edge lengths of 400–450 nm grown on an n-type (110) GaAs wafer.
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Schedule a callMore From: Chemistry of materials : a publication of the American Chemical Society
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