Abstract
This study describes a modified atomic layer deposition (ALD) process for fabricating BiOxSey thin films, targeting their application as high-k dielectrics in semiconductor devices, especially for two-dimensional semiconductors. Using an intermediate-enhanced ALD technique for Bi2Se3 and a plasma-enhanced ALD process for Bi2O3, a method for the sequential deposition of Bi2SeO5 ternary films has been established. The thin film has been deposited on SiO2 and TiN substrates, exhibiting growth rates of 0.17 to 0.16 nm·cycle-1 without an incubation period, thanks to facile nucleation characteristics. The resulting film exhibited high flatness and reached 96% of its theoretical density, forming a uniform nanocrystalline structure. Electrical evaluations using metal-insulator-metal capacitors indicated the dielectric constant (∼17.6) and electrical breakdown strength (2.6 MV·cm-1), demonstrating their potential as a dielectric layer.
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