Abstract
We have directly grown [100]-oriented high-quality β-FeSi2 films on Si(001) substrates with a β-FeSi2 template by molecular beam epitaxy(MBE) at 470°C. It was found that the crystalline quality of the as-grown β-FeSi2 film was as good as that of the film grown by the multilayer method as far as X-ray diffraction intensity was concerned. However, the electrical property of the as-grown β-FeSi2 film was very poor. The crystalline quality and the electrical property were much more quickly improved by 900°C annealing compared to the films grown by the multilayer technique. The [100] orientation of MBE-grown β-FeSi2 film was preserved even for a 1-µm-thick film.
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