Abstract
In this study, p-type ZnO:K was successfully produced by potassium hydroxide using a sol-gel deposition process. The deposited ZnO:K samples were examined by using scanning electron microscopy (SEM), X-ray diffraction (XRD), Hall-effect measurements, photoluminescence spectroscopy (PL) and Ultraviolet–visible ((UV–vis)) spectroscopy. It was found that the amount K-doping strongly affects the structure and optoelectronic properties of ZnO, with p-type conduction obtained in films doped between 2–5 at%.
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