Abstract

This study describes a novel fabrication technique to grow gold nanoparticles (AuNPs) directly on seeded ZnO sacrificial template/polymethylsilsesquioxanes (PMSSQ)/Si using low-temperature hydrothermal reaction at 80°C for 4 h. The effect of non-annealing and various annealing temperatures, 200°C, 300°C, and 400°C, of the ZnO-seeded template on AuNP size and distribution was systematically studied. Another PMMSQ layer was spin-coated on AuNPs to study the memory properties of organic insulator-embedded AuNPs. Well-distributed and controllable AuNP sizes were successfully grown directly on the substrate, as observed using a field emission scanning electron microscope followed by an elemental analysis study. A phase analysis study confirmed that the ZnO sacrificial template was eliminated during the hydrothermal reaction. The AuNP formation mechanism using this hydrothermal reaction approach was proposed. In this study, the AuNPs were charge-trapped sites and showed excellent memory effects when embedded in PMSSQ. Optimum memory properties of PMMSQ-embedded AuNPs were obtained for AuNPs synthesized on a seeded ZnO template annealed at 300°C, with 54 electrons trapped per AuNP and excellent current–voltage response between an erased and programmed device.

Highlights

  • Organic materials and devices have drawn attention for applications in modern electronic devices due to their excellent processability in large-area circuits; possibility for molecular design through chemical synthesis; high mechanical flexibility, comparable to flexible substrates; low processing cost; lower power consumption; good scalability; multiple state property; three-dimensional stacking capability; and large data storage capacity [1,2,3,4,5]

  • The ZnO-seeded samples were subjected to a hydrothermal reaction in a preheated oven at 80°C for 4 h

  • A similar result was reported by Chu et al [24]

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Summary

Introduction

Organic materials and devices have drawn attention for applications in modern electronic devices due to their excellent processability in large-area circuits; possibility for molecular design through chemical synthesis; high mechanical flexibility, comparable to flexible substrates; low processing cost; lower power consumption; good scalability; multiple state property; three-dimensional stacking capability; and large data storage capacity [1,2,3,4,5]. Using a three-layer stacking structure, a tri-layer (polymer/ metallic nanoparticle/polymer) structure has demonstrated a bistable memory effect. This simple tri-layer can be used to construct a memory device in a structure consisting of metal/tri-layer/semiconductor layers, the MIS structure. The semiconductor layer is used as an electronic charge source to be injected into the tri-layer to be trapped by the nanoparticles [6,7,8,9]. Gold nanoparticles (AuNPs) possess important properties for device fabrication as well as good memory characteristics, such as easy synthesis approach, high work function [10,11,12], good electron-accepting properties [13], and chemical stability [12]. A broad work function improves the retention time and speed of the write-erase process [14]

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