Abstract
Low-temperature formation of crystalline silicon (c-Si) is demonstrated by controlling the early stages of a parallel plate rf (13.56 MHz) plasma-enhanced chemical vapor deposition (PE-CVD) in silicon tetrachloride (SiCl 4) and H 2 mixture. The crystal size, height and the number density were directly controlled by rf power, pressure and substrate temperature. The growth mechanism is discussed in terms of the chemical reactivity of the chlorine-terminated surface with atomic hydrogen.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have