Abstract
Ferroelastic domain boundaries in semiconductor bismuth vanadate, BiVO4, are examined using second harmonic generation microscopy. Although the bulk is centrosymmetric, domain boundaries produce homogeneous second harmonic (SH) signals. The polarization dependences of SH intensities exhibit strong anisotropy compatible with the polar symmetry m. The present results are compared with the experimental results of other ferroelastics we have observed so far. Unlike other ferroelastic materials, the directions of the SH maxima are in the same direction for all domain boundaries.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
