Abstract
Thin films of polycrystalline Cu2ZnSnSe4 were made by selenization of co-sputtered metallic precursors and processed to solar cells. Electron beam induced current (EBIC) in combination with microscopic scale IV characterization is used to investigate lateral inhomogeneities in electrical performance across the solar cell area. Transmission electron microscopy relates areas with low EBIC response to the formation of a ZnSe phase at the absorber surface resulting in a current blocking behavior and a reduced short-circuit current density for the solar cells. Areas without ZnSe have a high EBIC response and result in high quality diodes well suited for solar cells.
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