Abstract
An investigation of two-wavelength excited photoluminescence on GaPN alloys containing 0.56% nitrogen was conducted to directly excite intermediate band (IB) states and monitor its impact on photoluminescence (PL) properties. The 22 K PL due to above-gap excitation (AGE) showed broad peak emission induced by the IB states. With the use of below-gap excitation (BGE) of 1.17 eV energy in addition to the AGE, the PL peak intensity was found to decrease linearly with increasing the BGE power, which suggests that the BGE perturbs the bound exciton recombination mechanism by exciting electrons from the IB states through the dissociation of excitons.
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