Abstract
We report the first direct evidence for a strong electron-phonon coupling on carrier capture process in a-Si:H. Results on the low-energy luminescence transition induced by the below-bandgap excitation (h v = 1.17 eV and h v = 0.94 eV) and the below-bandgap optical absorption spectrum of P-doped a-Si:H lead to a strong indication that (1) the low-energy PL band originates from the deexcitation of an electron from the conduction band edge to the defect states and (2) this process is predominated by a strong electron-phonon coupling with a Franck-Condon shift of about 0.28 eV at 77 K.
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