Abstract
The areal density of extended defects in P-implanted and annealed Si is observed to increase with ion dose to the power 8. A simple model based on Poisson statistics applied to point defects created during ion implantation shows that such a dependence corresponds to enhanced stability of interstitial clusters consisting of at least eight interstitial atoms, and it implies an interstitial “clustering” radius of 0.8 nm. The direct observation of “n=8” confirms the curious behavior observed earlier in transient-enhanced diffusion of B in Si, and provides a quantitative explanation of the threshold dose for the formation of extended defects in ion-implanted Si.
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