Abstract
The areal density of extended defects in P-implanted and annealed Si is observed to increase with ion dose to the power 8. A simple model based on Poisson statistics applied to point defects created during ion implantation shows that such a dependence corresponds to enhanced stability of interstitial clusters consisting of at least eight interstitial atoms, and it implies an interstitial “clustering” radius of 0.8 nm. The direct observation of “n=8” confirms the curious behavior observed earlier in transient-enhanced diffusion of B in Si, and provides a quantitative explanation of the threshold dose for the formation of extended defects in ion-implanted Si.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
