Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications.

Abstract

Following a remarkable success of metallic spintronics, tremendous efforts have been invested into the less developed semiconductor spintronics, in particular, with the aim to produce three-terminal spintronic devices, e.g., spin transistors. One of the most important prerequisites for such a technology is an effective injection of spin-polarized carriers into a nonmagnetic semiconductor, preferably one of those currently used for industrial applications such as Si-a workhorse of modern electronics. Ferromagnetic semiconductor EuO is long believed to be the best candidate for integration with Si. Although EuO proved to offer optimal conditions for effective spin injection into silicon and in spite of considerable efforts, the direct epitaxial stabilization of stoichiometric EuO thin films on Si without any buffer layer has not been demonstrated to date. Here we report a new technique for control of EuO/Si interface on submonolayer level. Using this technique we solve a long-standing problem of direct epitaxial growth on silicon of thin EuO films which exhibit structural and magnetic properties of EuO bulk material. This result opens up new possibilities in developing all-semiconductor spintronic devices.