Abstract
AbstractWe used a high current density focused electron beam to modify a GaAs substrate. To avoid any oxidation or carbon contamination problem, an in-situ electron gun, combined with III-V molecular beam epitaxy (MBE) machine, was used. By changing the substrate temperature and the electron beam dwell time on each spot, different sizes of thermal irradiation marks were created. Fabricated spot-diameters in the sub-micrometer range suggest the possible utilization of this process for novel applications with the MBE growth technique.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
