Abstract
Measurements of the ratio of fast to slow component in the transient response of a Ge:Ga extrinsic photoconductor to a step function increase in photon flux have been used to determine the mobility-lifetime ( μτ) product as a function of applied electric field. The μτ product is obtained from a single measurement, independent of the absolute value of the background flux or signal size. We find a linear increase in μτ over a field range from 0.4 to 1.0 V/cm.
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