Abstract
A systematic method is developed and demonstrated here to determine the Burgers vectors of threading mixed dislocations in4H-SiC c-plane offcut wafers grown by PVT method. Both Synchrotron Monochromatic X-ray Topography and Ray Tracing Simulations are used in this method. Measurements confirm that in a commercial offcut wafer the majority of the threading dislocations with screw component are actually mixed type dislocations.
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