Direct Determination of Built-in Voltages in Asymmetric Single-Carrier Devices

Abstract

Mobility measurements using single-carrier devices are one of the most common means for probing charge transport in intrinsic semiconductors; however, the built-in voltage must be known in advance, for precise analysis of the current-voltage curves obtained from measuring space-charge-limited current. The author presents an easy, direct analytical model for determining the built-in voltage of a single-carrier device directly from the $J\ensuremath{-}V$ curves, without any knowledge of the charge-carrier mobility. This approach is expected to be immediately and widely useful to the large community working on semiconductor physics and devices.