Direct detection of high intensity X-ray fluxes with silicon photomultipliers

Abstract

Silicon Photomultipliers (SiPM) are photodetectors optimized for the detection of infrared to ultraviolet photons and employed in a wide range of fast timing applications for medical imaging and particle detectors. SiPMs are used to detect the passage of ionizing radiation into matter via the collection of secondary photons emitted by the radiator material. In this work, we have investigated the possibility to detect high intensity X-ray fluxes using the DC current produced by SiPMs exposed directly to the X-ray beam, in absence of any passive converter material, to demonstrate the possibility to measure intense radiation fluxes without saturation of the SiPM response. In our application, the signal-to-noise ratio of the SiPM current during the direct exposition to X-rays is typically larger than 100, providing a robust indication of a positive detection. We show that, for a wide range of operational parameters and X-ray flux intensities, the SiPM current can be correlated to the X-ray beam intensity using a parametrization that describes the data with an accuracy of the order or better than 1%. We also show that the SiPM signal current to dark current ratio is maximum for hundreds of mV above the breakdown voltage, with a weak dependence on temperature. These results open the prospects for interesting applications for monitoring intense X-ray beams, for example beam spatial profiling, and possibly real time dosimetry both in medical and industrial applications.