Abstract

This paper reports on the study of direct current (DC) magnetron glow discharge plasma characteristics in a cylindrical magnetron system in argon-nitrogen. Presence of nitrogen gas makes the plasma environment reactive, and it results in significant changes of the plasma properties—number density, electron temperature, floating potential, and sheath thickness. Applied magnetic field is a parameter which is closely related to proper deposition of thin film. Cylindrical Langmuir probe and Emissive probe are used as diagnostics for the estimation of various plasma parameters indicated earlier. Controlled titanium nitride (TiN) thin film deposition on bell-metal at different argon-nitrogen gases ratio is another important study reported.

Highlights

  • In today’s modern civilization, plasma finds application as light sources, new kinds of television screens, in reactors for fusion experiments

  • The second major important characteristic of the processing plasmas is that they produce active species which are more numerous, different in kind, and/or more energetic than those produced in chemical reactors

  • Magnetron glow discharge systems differ from the conventional glow discharge systems by employing externally applied magnetic field in axial direction parallel to the cathode surface

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Summary

Introduction

In today’s modern civilization, plasma finds application as light sources, new kinds of television screens, in reactors for fusion experiments. The second major important characteristic of the processing plasmas is that they produce active species which are more numerous, different in kind, and/or more energetic than those produced in chemical reactors These active species make it possible to do things to the surface of materials that can be done in no other way. A large number of technological fields employ direct current magnetron glow discharge process for sputter deposition of different compound films [1, 2]. This process is widely regarded as an environment friendly process since it fully avoids the use of various chemical reactants [3]. The delicate dependence of plasma parameters (density profile, temperature, and energy distributions) on the sputtering efficiency as well as on the physicochemical processes leading to quality film growth in reactive sputtering is undoubtedly a subject of investigation

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