Abstract
A low-temperature silicon pack cementation has been developed by applying direct current field (DCF) between the treated sample and the powder agents. The cross-sectional microstructures, coating thickness and high temperature oxidation resistance after siliconizing under different processes were investigated. The results show that DCF can significantly reduce the treating temperature and heating duration comparing with the conventional silicon pack cementation, the heating temperature could be lowered to 750°С from higher than 1050°С normally used. When the treating temperature was 800°С with appropriate intensity of DCF, the siliconizing coatings with thickness around 40μm was produced, while at this temperature, almost no coating could be formed by conventional silicon pack cementation，and the coating rapidly formed at lower temperature had good oxidation resistance below 700°С .
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