Abstract
We use experimental results of direct current and low signal impedance spectroscopy to investigate the conduction mechanism in organic semiconductor ZnPc. The experimental results demonstrate an increase in current and holes mobility by the introduction of a thin MoO 3 film at the ITO/ZnPc interface. This significantly improves the device performance. The improvement is explained in terms of the reduction in the effective barrier for charge transfer from ZnPc to ITO.
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