Abstract
In this paper, physical and electrical results of full wafer direct Cu plating of 2×40 µm TSVs with thin Ru seed are presented. Physical vapor deposition of about 100 nm Cu in the field is shown to improve plating non-uniformity across the structured wafer. TSV plating using Atotech's TSV III chemistry results in bottom-up growth with strong TSV sidewall suppression and void free TSV fill. Early results for in-line electrical test and voltage ramp dielectric breakdown reliability testing are discussed.
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