Abstract
We show that the use of low-frequency (LF) noise measurements as a new, faster technique for electromigration (EM) characterization is not limited to providing EM activation energies (which was previously demonstrated) but can also explain and even predict EM lifetimes of interconnect lines. Two models are proposed: one is to predict EM void nucleation and one to predict void growth times. Predictions can be made for individual interconnects based on the results of non-destructive LF noise measurements, prior to actual EM stress, which is not possible with any other EM test method presently available.
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