Abstract
Epitaxial Sb-doped SnO 2 (0 0 1) thin film on a TiO 2 (0 0 1) substrate was successfully prepared by laser-assisted metal organic deposition at room temperature. The effects of the precursor thin film and laser fluence on the resistivity, carrier concentration, and mobility of the Sb-doped SnO 2 film were investigated. The resistivity of the Sb-doped SnO 2 film prepared by direct irradiation to metal organic film is one order of magnitude lower than that of film prepared by irradiation to amorphous Sb-doped SnO 2 film. From an analysis of Hall measurements, the difference between the resistivity of the Sb-doped SnO 2 film prepared using the metal organic precursor film and that of amorphous precursor film appears to be caused by the mobility. Direct conversion of the metal organic compound by excimer laser irradiation was found to be effective for preparing epitaxial Sb-doped SnO 2 film with low resistivity.
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