Abstract
We present precision measurements of the fractional quantized Hall effect, where the quantized resistance in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance , represented by an integer quantum Hall state at filling factor 2. A cryogenic current comparator bridge capable of currents down to the nanoampere range was used to directly compare two resistance values of two GaAs-based devices located in two cryostats. A value of 1–(5.3 ± 6.3) 10−8 (95% confidence level) was obtained for the ratio (). This constitutes the most precise comparison of integer resistance quantization (in terms of h/e2) in single-particle systems and of fractional quantization in fractionally charged quasi-particle systems. While not relevant for practical metrology, such a test of the validity of the underlying physics is of significance in the context of the upcoming revision of the SI.
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