Abstract
Hafnium silicon oxynitride (HfSiON) films were deposited on 200-mm silicon substrates by low-pressure chemical vapor deposition (LPCVD) from a combination of trisilylamine (TSA) and tetrakis(diethylamido)hafnium(IV) (TDEAH) in the temperature range 450 to 575 °C. A highly volatile and carbon-free silicon precursor TSA was used to deposit HfSiON films for the first time. HfSiON films were deposited in a single step with no need of a post-treatment process for nitrogen incorporation. The film composition was tuned in a wide compositional range, and high growth rates were achieved. NH3 was found to have profound effects on film growth rate, metal ratio (Si% or Hf%), nitrogen incorporation, and carbon residue in the films.
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