Abstract
Purpose The work aims to study the direct bonding of silicon substrate with solders type Sn-Ag-Ti. Design/methodology/approach During the bonding process with ultrasound assistance, the active element (Ti,Ce,Mg) is distributed from the solder to interface with a silicon substrate, where it supports the bond formation. Findings Formation of a reaction layer, 1-2 μm in thickness, was observed. The new Si2Ti phases and Mg2Si phase were identified in the reaction layer. Originality/value The results of analysis suggest that the Si/Sn-Ag-Ti joint is of diffusion character. The highest average strength on silicon substrate (39 MPa) was achieved with Sn-Ag-Ti(Mg) solder.
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