Abstract
We prepared SOI (silicon-on-insulator) wafer pairs of 2000 A-SiO2/Si(100) and 560 a-Si3N4/Si(100) by CFA (Conventional electric Fumace Annealing), RTA (Rapid Thermal Annealing), and FLA (Fast Linear Annealing) at different annealing temperatures for each annealing process. We measured the bonding area and the bonding strength for the respective processes. It was demonstrated that the measured bonding area was close to 100% above 450°C for RTA, and 400°C for CFA. The maximum bond strength of the SiO2/Si3N4 wafer pair was 2344, 2300, and 195 mJ/m2 for CFA, FLA, and RTA, respectively. We clearly demonstrated that the FLA method is far superior in producing high-quality directly bonded Si wafer pairs with SiO2 and Si3N4films compared to the CFA and RTA methods.
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