Abstract
A convenient and efficient approach for direct bonding of Si3N4 ceramic to copper via laser surface modification is introduced in this work. Laser irradiation was capable of dissociating Si3N4 to create a silicon metalloid layer that attained the metallurgical bonding with copper facilitated by the copper-silicon eutectic reaction. The analytical test results show that a strong Si3N4/copper bonded pair with the shear strength of 18.3 MPa, along with a low bonding defect density (0.4%) was obtained. The validity and reliability of the as-prepared Si3N4/copper structure were verified given ca. 99.4% bonded area maintained after 1000 cycles of thermal cycling testing. This proof-of-concept study on the Si3N4/copper bonding approach with laser modification provides insights to fabricate the metalized ceramic substrate.
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