Abstract
A direct wafer bonding process necessary for GaAs-on-insulator (GOI) fabrication with high thermal annealing temperatures was studied by using PECVD oxides between gallium arsenide and silicon wafers. In order to apply some uniform pressure on initially-bonded wafer pairs, a graphite sample holder was used for wafer bonding. Also, a tool for measuring the tensile forces was fabricated to measure the wafer bonding strengths of both initially-bonded and thermally-annealed samples. GaAs/<TEX>$SiO_2$</TEX>/Si wafers with 0.5-<TEX>$\mu$</TEX>m-thick PECVD oxides were annealed from <TEX>$100^{\circ}C\;to\;600^{\circ}C$</TEX>. Maximum bonding strengths of about 84 N were obtained in the annealing temperature range of <TEX>$400{\sim}500^{\circ}C$</TEX>. The bonded wafers were not separated up to <TEX>$600^{\circ}C$</TEX>. As a result, the GOI wafers with high annealing temperatures were demonstrated for the first time.
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