Direct bonding copper with alumina and aluminum nitride ceramic substrates

Abstract

This paper will discuss the technological aspects of direct bonding copper (DBC) process conducted on a copper foil (M00б) with high thermal conductive alumina (BK-96, BK-100) and aluminum nitride ceramics (AIN) being utilized in bonding. There is a wide use of DBC structure in the construction of high power semiconductor devices. The paper will also provide the results of the research on compound interfaces that was carried out based on DBC technology. The results of scanning electron microscopy (SEM) and X-ray diffraction (XRD) show that the DBC interface contains interphases of spinel-type copper aluminates CuAl 2 O 4 and CuAlO 2 , which affect an adhesive strenght of DBC joining interface. The bonding strenght of DBC interfaces was measured, with the results of said measurements presented in this paper.