Abstract
This paper reports the comprehensive characterization of a Ge0.92Sn0.08/Ge0.86Sn0.14/Ge0.92Sn0.08 single quantum well. By using a strain relaxed Ge0.92Sn0.08 buffer, the direct bandgap Ge0.86Sn0.14 QW was achieved, which is unattainable by using only a Ge buffer. Band structure calculations and optical transition analysis revealed that the quantum well features type-I band alignment. The photoluminescence spectra showed dramatically increased quantum well peak intensity at lower temperature, confirming that the Ge0.86Sn0.14 quantum well is a direct bandgap material.
Highlights
Recent development of group IV-based GeSn light-emitting devices has opened a new avenue for photonic integration on the Si substrate.[1,2,3,4,5,6,7,8,9] The successful demonstration of direct bandgap GeSn light emitting diodes (LEDs), and optically-pumped GeSn lasers,[10,11,12,13,14] indicates the great potential of GeSn for Si-based light sources
It is generally acknowledged that the quantum wells (QWs) structures could be applied to the LEDs and lasers to improve their device performance
LEDs based on the Ge/GeSn/Ge QW structure have been demonstrated,[27] whose detailed analysis suggested that using Ge as a barrier did not provide the desired carrier confinement, and thereupon use of the ternary material SiGeSn as the barrier was proposed, since the bandgap energy and lattice constant of SiGeSn alloys can be tuned independently
Summary
Recent development of group IV-based GeSn light-emitting devices has opened a new avenue for photonic integration on the Si substrate.[1,2,3,4,5,6,7,8,9] The successful demonstration of direct bandgap GeSn light emitting diodes (LEDs), and optically-pumped GeSn lasers,[10,11,12,13,14] indicates the great potential of GeSn for Si-based light sources. (Received 19 December 2017; accepted 30 January 2018; published online 6 February 2018)
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