Abstract
Horizontal injection Ge p-i-n ridge waveguide light emitting diodes (LEDs) were fabricated on n−-Si(001) substrates by ultrahigh vacuum chemical vapor deposition. The direct-bandgap electroluminescence (EL) of Ge waveguide LEDs under a continuous/pulse electrical pump was studied. The heating effect from a continuous electrical pump was found to significantly enhance the emission of devices. The top surface EL intensity of the Ge waveguide LEDs significantly depended on the position. Most direct-bandgap radiative recombination of Ge p-i-n waveguide LEDs occurred near the N+ region of the junction. This interesting phenomenon could be explained by the carrier distribution in the junction and the pseudo-direct bandgap of Ge.
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