Abstract
Germanium has been considered as a promising material for near-infrared optical devices due to its higher carrier mobility and adjustable band structure. In this study, the low temperature combined with high temperature (LT-HT) two-step method is utilized to fabricate the edge emitting germanium diode who can be an application for near infrared. The tensile strain of the germanium layer is determined by XRD and Raman, which are about 0.3%. The TEM results show a high material quality near the surface of the Ge layer with few defects at the Si/Ge interface. Then, the chip is packaged to facilitate testing and protect the device. The I-V characteristics indicate a reserve saturation current of about 10−3A/cm2 at -0.1V in the dark. The EL measurement with a stable EL peak at 1640nm was observed.
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