Abstract
Direct and indirect energy gaps of AlAs at 300°K, 3.14 and 2.14 eV, respectively, have been obtained from optical absorption measurements on vapor-grown single-crystalline specimens. The present direct-bandgap value is higher by about 0.2 eV than that previously reported, while the present indirect-bandgap value is in good agreement with a recent value. The optical measurements revealed, in addition to the direct and indirect absorption edges, the existence of an absorption peak due to nonstoichiometry.
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