Abstract
The new laser ablation technique has been developed for analysis of metallic impurities in SiC and GaN wafers. Particles generated by a femto-second laser ablation were aspirated by an ejector and introduced to an Inductively Coupled Plasma Mass Spectrometry (ICP-MS) via a Gas Exchange Device (GED) and analyzed. A Metal Standard Aerosol Generation (MSAG) was used for quantitation of metallic impurities in SiC and GaN wafers.
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