Abstract

A diode-pumped Q-switched neodymium-doped yttrium vanadate (Nd:YVO4, λ = 1064 nm) laser was applied to obtain graphene patterns on a photopolymer layer by direct ablation. In the transfer process of the graphene layer, the photopolymer was employed as a graphene supporting layer and it was not removed for the simplification of the process. The laser ablation was carried out on graphene/photopolymer double layers for various beam conditions. The results showed that the laser-ablated widths on the graphene/photopolymer double layer were much greater than those on the graphene monolayer, especially at lower scanning speeds and at higher repetition rates. The photopolymer layer was not removed by the laser ablation, and the thermal energy was considered to have been dissipated in the lateral direction of graphene instead of being conducted vertically to the glass substrate. The Raman spectrum results showed that the graphene layer was clearly removed on the laser-ablated region of interest.

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