Abstract
Peculiarities of the MBE growth technology for the Dirac’s semimetal based on the Hg1-x Cdx Te alloys have been presented. Composition of layers was controlled by ToF-SIMS, FTIR measurements, and by the E1+Δ1 maximum position of optical reflectivity in visible reason. The surface morphology has by determined via atomic force and electron microscopy.
Highlights
Since 1958 the HgCdTe alloys are main material for infrared devices [1]
The Topological Insulators (TI) based on the HgCdTe became actual in 3D case [3]
In this short communication is presented peculiarity of the MBE technology designed to the strong TI producing based on semi-metallic Hg1-xCdxTe Te with x≤ 0.16 what is semimetal yet but close to the 3D Dirac point
Summary
In last decade (from 2007 [2]]) a new property of this material, namely, inverted band structure caused by strong spin-orbital interaction, forms a new opportunity for this material – possibility to produce topological phase on surface By this way, the Topological Insulators (TI) based on the HgCdTe became actual in 3D case [3]. The Topological Insulators (TI) based on the HgCdTe became actual in 3D case [3] In this short communication is presented peculiarity of the MBE technology designed to the strong TI producing based on semi-metallic Hg1-xCdxTe Te with x≤ 0.16 what is semimetal yet but close to the 3D Dirac point
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